transistor noise

With the whole new method, simple calculation instead of the traditional measures which used to design low noise single-stage negative feedback amplifier, the relations among the transistor data, feedback effect, noise factor, as well as singal resistance are studied.

本文一改过去负反馈低噪声放大器的设计步骤，采用全新的方法&方框图法，确定了负反馈电路中晶体管参数，反馈深度、噪声系数、信号源内阻和工作频率之间的关系。

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Then it presents the difficulties about the design of low noise amplifier after reading a large number of literatures, including the matching network, the stability of the transistor and so on.

在阅读大量相关文献的基础上，分析了低噪声放大器研制过程中遇到的困难，包括匹配电路的设计以及提高晶体管稳定性的方法等等问题。

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Design and Realization of Low Noise Four Transistor Pixel CMOS Image Sensor

低噪声四管像素CMOS图像传感器设计与实现

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Study on the Relation between Complex Correlation Coefficient Transistor Noise Model and its Internal Noise Sources

晶体管噪声模型复相关系数与其内部噪声源的关系

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Through the low-noise amplifier designed, the spectrum and time figure of the transistor noise at low frequency ( 100mHz~ 1.65Hz) was measured, besides that, the scale invariant range and fractal dimension are calculated with several methods.

利用设计的低噪声放大器，测量出晶体管低频段（100mHz&1.65Hz）噪声的功率谱及时间波形，找出了其无标度区间，并用多种方法计算了分形维。

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